1. product profile 1.1 general description p-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology. 1.2 features and benefits ? 1.8 v r dson rated for low voltage gate drive ? very fast switching ? trench mosfet technology ? aec-q101 qualified 1.3 applications ? relay driver ? high-speed line driver ? high-side loadswitch ? switching circuits 1.4 quick reference data [1] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 6 cm 2 , t 5s. [2] pulse test: t p 300 s; ? 0.01. NX2301P 20 v, 2 a p-channel trench mosfet rev. 1 ? 26 october 2010 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t amb =25 c-- ? 20 v v gs gate-source voltage t amb =25 c-- 8v i d drain current t amb =25 c; v gs = ? 4.5 v [1] -- ? 2a r dson drain-source on-state resistance t j =25 c; v gs = ? 4.5 v; i d = ? 1a [2] - 100 120 m product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com 4008-318-123
NX2301P 20 v, 2 a p-channel trench mosfet 2. pinning information 3. ordering information 4. marking [1] * = placeholder for manufacturing site code 5. limiting values table 2. pinning pin symbol description simplified outline graphic symbol 1 g gate 2s source 3 d drain 12 3 017aaa09 4 s d g table 3. ordering information type number package name description version NX2301P to-236ab plastic surface-mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] NX2301P mg* table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t amb =25 c- ? 20 v v gs gate-source voltage t amb =25 c- 8v i d drain current v gs = ? 4.5 v [1] t amb =25 c- ? 2a t amb =100 c- ? 1.2 a i dm peak drain current t amb =25 c; single pulse; t p 10 s - ? 6a product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com 4008-318-123
20 v, 2 a p-channel trench mosfet [1] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 6 cm 2 , t 5s. [2] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. p tot total power dissipation t amb =25 c [2] -400mw [1] -710mw t sp =25 c-2.8w t j junction temperature 150 c t amb ambient temperature ? 55 +150 c t stg storage temperature ? 65 +150 c source-drain diode i s source current t amb =25 c [1] - ? 0.7 a table 5. limiting values ?continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit NX2301P product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com 4008-318-123
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